| 专利名称 | Nonlinear optical device manufactured with 4H silicon carbide crystal | 申请号 | US201214370510 | 专利类型 | US | 公开（公告）号 | US9500931(B2) | 公开（授权）日 | 2016.11.22 | 申请（专利权）人 | 中国科学院物理研究所 | 发明（设计）人 | Chen Xiaolong;Wang Shunchong;Peng Tonghua;Wang Gang;Liu Chunjun;Wang Wenjun;Jin Shifeng | 主分类号 | G02F1/355 | IPC主分类号 | G02F1/355;G02F1/35;G02F1/361;G02F1/39;H01S3/23;H01S3/00 | 专利有效期 | Nonlinear optical device manufactured with 4H silicon carbide crystal 至Nonlinear optical device manufactured with 4H silicon carbide crystal | 法律状态 | 说明书摘要 | Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam (12) at a frequency to generate at least a light beam (16) at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal (13). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 μm and 6.6-7.08 μm), a relatively great 2nd-order nonlinear optical coefficient (d15=6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 Wm?1K?1), and a high chemical stability. |
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2、平台验证，实名审核
3、合同监控，代办手续
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