| 专利名称 | Semiconductor memory device and method for accessing the same | 申请号 | US201213508204 | 专利类型 | US | 公开（公告）号 | US9542990(B2) | 公开（授权）日 | 2017.01.10 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Zhengyong;Luo Zhijiong | 主分类号 | G11C13/02 | IPC主分类号 | G11C13/02;G11C11/403;G11C13/00;H01L27/108 | 专利有效期 | Semiconductor memory device and method for accessing the same 至Semiconductor memory device and method for accessing the same | 法律状态 | 说明书摘要 | A semiconductor memory device and a method for accessing the same are disclosed. The semiconductor memory device includes an oxide heterojunction transistor which includes: an oxide substrate; an oxide film on the oxide substrate, wherein an interfacial layer between the oxide substrate and the oxide film behaves like two-dimensional electron gas; a source electrode and a drain electrode being located on the oxide film and electrically connected with the interfacial layer; a front gate on the oxide film; and a back gate on a lower surface of the oxide substrate, wherein the source electrode and the drain electrode of the oxide heterojunction transistor are respectively connected with a first word line and a first bit line for reading operation, and wherein the front gate and the back gate are respectively connected with a second word line and a second bit line for writing operation. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障