| 专利名称 | Isolation structure, method for manufacturing the same, and semiconductor device having the structure | 申请号 | US201113142378 | 专利类型 | US | 公开（公告）号 | US9543188(B2) | 公开（授权）日 | 2017.01.10 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Luo Zhijiong;Yin Haizhou;Zhu Huilong;Zhong Huicai | 主分类号 | H01L21/76 | IPC主分类号 | H01L21/76;H01L21/762;H01L21/8234 | 专利有效期 | Isolation structure, method for manufacturing the same, and semiconductor device having the structure 至Isolation structure, method for manufacturing the same, and semiconductor device having the structure | 法律状态 | 说明书摘要 | The present invention provides an isolation structure for a semiconductor substrate and a method for manufacturing the same, as well as a semiconductor device having the structure. The present invention relates to the field of semiconductor manufacture. The isolation structure comprises: a trench embedded in a semiconductor substrate; an oxide layer covering the bottom and sidewalls of the trench, and isolation material in the trench and on the oxide layer, wherein a portion of the oxide layer on an upper portion of the sidewalls of the trench comprises lanthanum-rich oxide. By the trench isolation structure according to the present invention, metal lanthanum in the lanthanum-rich oxide can diffuse into corners of the oxide layer of the gate stack, thus alleviating the impact of the narrow channel effect and making the threshold voltage adjustable. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障