| 专利名称 | Preparation method of crystalline silicon film based on layer transfer | 申请号 | US201414890081 | 专利类型 | US | 公开（公告）号 | US9502240(B2) | 公开（授权）日 | 2016.11.22 | 申请（专利权）人 | 中国科学院上海高等研究院 | 发明（设计）人 | Liu Dongfang;Zhang Wei;Chen Xiaoyuan;Yang Hui;Wang Cong;Lu Linfeng | 主分类号 | H01L21/44 | IPC主分类号 | H01L21/44;H01L21/02;H01L21/306;H01L21/3065;H01L31/18 | 专利有效期 | Preparation method of crystalline silicon film based on layer transfer 至Preparation method of crystalline silicon film based on layer transfer | 法律状态 | 说明书摘要 | Provided is a preparation method of a crystalline silicon film. The method includes: 1) forming a mask for making a periodic silicon rod array on a monocrystalline silicon wafer substrate, and forming the periodic silicon rod array on the monocrystalline silicon substrate by a wet chemical etching or dry etching process; 2) forming barrier layers both on the surface of the monocrystalline silicon substrate and the surface of the silicon rod array for next selectively epitaxial growth of silicon; 3) exposing silicon cores on the heads of the rod array by a selective etching process to form a protruded silicon seeds out of the mother wafer substrate; 4) growing a continuous silicon film at the top of the rod array by a selective epitaxial chemical vapor deposition method using the exposed silicon cores as protruded seeds while leaving voids between the film and the mother wafer substrate; and 5) lifting off the silicon film and transferring the silicon film to a preset substrate, and the seeded substrate is reusable. |
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