| 专利名称 | Defect detection system for extreme ultraviolet lithography mask | 申请号 | US201214391682 | 专利类型 | US | 公开（公告）号 | US9546964(B2) | 公开（授权）日 | 2017.01.17 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Li Hailiang;Xie Changqing;Liu Ming;Li Dongmei;Niu Jiebin;Shi Lina;Zhu Xiaoli | 主分类号 | G06K9/00 | IPC主分类号 | G06K9/00;G01N21/88;G03F1/84;G02B21/16;G02B27/42;G01N21/47;G01N21/95;G06T7/00;G01N21/956 | 专利有效期 | Defect detection system for extreme ultraviolet lithography mask 至Defect detection system for extreme ultraviolet lithography mask | 法律状态 | 说明书摘要 | A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障