| 专利名称 | FinFET and method of manufacturing same | 申请号 | US201314904140 | 专利类型 | US | 公开（公告）号 | US9515169(B2) | 公开（授权）日 | 2016.12.06 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Liu Yunfei | 主分类号 | H01L29/66 | IPC主分类号 | H01L29/66;H01L29/78;H01L21/02;H01L21/311;H01L21/762;H01L29/06 | 专利有效期 | FinFET and method of manufacturing same 至FinFET and method of manufacturing same | 法律状态 | 说明书摘要 | There is provided a FinFET fabricating method, comprising: a. providing a substrate ; b. forming a fin on the substrate; c. forming a channel protective layer on the fin; d. forming a shallow trench isolation on both sides of the fin; e. forming a sacrificial gate stack and a spacer on the top surface and sidewalls of the channel region which is in the middle of the fin; f. forming source/drain regions in both ends of the fin; g. depositing an interlayer dielectric layer on the sacrificial gate stack and the source/drain regions, planarizing later to expose the sacrificial gate stack; h. removing the sacrificial gate stack stack to form a sacrificial gate vacancy and expose the channel region and the channel protective layer; i. covering a portion of the semiconductor structure in one end of the fin with a photoresist layer; j. removing a portion of the spacer not covered; k. removing the photoresist layer and filling a gate stack in the sacrificial gate vacancy; l. planarizing the semiconductor structure formed by the foregoing steps to expose the channel protective layer and forming a first separated gate stack and a second separated gate stack. Comparing with the prior art, control ability of independent-gate-voltage FinFET can be effectively improved and it is good for device performance. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障