| 专利名称 | Molecular glass photoresists containing bisphenol a framework and method for preparing the same and use thereof | 申请号 | US201214385238 | 专利类型 | US | 公开（公告）号 | US9454076(B2) | 公开（授权）日 | 2016.09.27 | 申请（专利权）人 | 中国科学院化学研究所 | 发明（设计）人 | Yang Guoqiang;Xu Jian;Chen Li;Wang Shuangqing;Li Shayu | 主分类号 | C07C43/205 | IPC主分类号 | C07C43/205;G03F7/004;C07C69/96;C07C39/16;C07C39/17;C07C43/21;G03F7/00;G03F7/038;G03F7/039;C07C37/16;C07C39/15;C07C41/01;C07C68/06 | 专利有效期 | Molecular glass photoresists containing bisphenol a framework and method for preparing the same and use thereof 至Molecular glass photoresists containing bisphenol a framework and method for preparing the same and use thereof | 法律状态 | 说明书摘要 | The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.; |
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