| 专利名称 | Graphene transistor optical detector based on metamaterial structure and application thereof | 申请号 | US201314761907 | 专利类型 | US | 公开（公告）号 | US9444002(B2) | 公开（授权）日 | 2016.09.13 | 申请（专利权）人 | 苏州纳米技术与纳米仿生研究所 | 发明（设计）人 | Chen Qin;Song Shichao | 主分类号 | H01L29/06 | IPC主分类号 | H01L29/06;H01L31/113;H01L31/028;H01L29/16;H01L29/08;H01L29/423;H01L31/0216;H01L27/146 | 专利有效期 | Graphene transistor optical detector based on metamaterial structure and application thereof 至Graphene transistor optical detector based on metamaterial structure and application thereof | 法律状态 | 说明书摘要 | A graphene transistor optical detector based on a metamaterial structure and an application thereof. The optical detector includes a substrate, a gate metal layer, a gate medium layer, a graphene layer, a source and drain metal layer successively arranged from bottom to top, wherein a local region of at least the source and drain metal layer has a periodic micro/nanostructure, the periodic micro/nanostructure being matched with the gate metal layer and the gate medium layer to form a metamaterial structure having a complete absorption characteristic. By changing the refractive index, thickness or the like of material for the periodic micro/nanostructure and the gate medium layer, a light absorption frequency band of the metamaterial structure can be regulated. The optical detector provided by the present invention has higher flexibility and narrow-band response, and can work under visible light to infrared even longer wavebands by selecting different metamaterial structures. |
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