| 专利名称 | Semiconductor arrangements and methods for manufacturing the same | 申请号 | US201314761262 | 专利类型 | US | 公开（公告）号 | US9461068(B2) | 公开（授权）日 | 2016.10.04 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong | 主分类号 | H01L29/78 | IPC主分类号 | H01L29/78;H01L27/12;H01L29/66;H01L29/06;H01L29/423;H01L29/165;H01L21/84 | 专利有效期 | Semiconductor arrangements and methods for manufacturing the same 至Semiconductor arrangements and methods for manufacturing the same | 法律状态 | 说明书摘要 | Semiconductor arrangements and methods for manufacturing the same are provided. In one embodiment, the arrangement may include: a semiconductor on insulator (SOI) substrate, comprising a base substrate, a buried dielectric layer, and a SOI layer; a back gate formed on the SOI substrate and passing through the buried dielectric layer to be in electric contact with the base substrate; fins formed from the SOI layer on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective fins. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障