| 专利名称 | Semiconductor structure and method for manufacturing the same | 申请号 | US201214394802 | 专利类型 | US | 公开（公告）号 | US9263581(B2) | 公开（授权）日 | 2016.02.16 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Yin Haizhou;Luo Zhijiong;Liang Qingqing | 主分类号 | H01L23/62 | IPC主分类号 | H01L23/62;H01L29/78;H01L29/66;H01L29/786;H01L21/265;H01L21/324;H01L29/06 | 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | A method for manufacturing a semiconductor structure comprises the following steps: providing an SOI substrate and forming a gate structure on the SOI substrate; implanting ions to induce stress in the semiconductor structure by using the gate structure as mask to form a stress-inducing region, which is located under the BOX layer on the SOI substrate on both sides of the gate structure. A semiconductor structure manufactured according to the above method is also disclosed. The semiconductor structure and the method for manufacturing the same disclosed in the present application form on the ground layer a stress-inducing region, which provides favorable stress to the semiconductor device channel and contributes to the improvement of the semiconductor device performance. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障