| 专利名称 | MOSFET and method for manufacturing the same | 申请号 | US201113510461 | 专利类型 | US | 公开（公告）号 | US9252280(B2) | 公开（授权）日 | 2016.02.02 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Xu Miao;Liang Qingqing | 主分类号 | H01L27/12 | IPC主分类号 | H01L27/12;H01L29/786;H01L29/66 | 专利有效期 | MOSFET and method for manufacturing the same 至MOSFET and method for manufacturing the same | 法律状态 | 说明书摘要 | The present disclosure discloses a metal-oxide-semiconductor field-effect transistor (MOSFET) and a method for manufacturing the same. The MOSFET includes: a silicon on insulator (SOI) wafer which comprises a semiconductor substrate, a buried insulating layer, and a semiconductor layer, the buried insulating layer being on the semiconductor substrate, and the semiconductor layer being on the buried insulating layer; a gate stack on the semiconductor layer; a source region and a drain region, which are in the semiconductor layer and on opposite sides of the gate stack; and a channel region, which is in the semiconductor layer and sandwiched by the source region and the drain region, wherein the MOSFET further comprises a back gate, the back gate being located in the semiconductor substrate and having a first doped region in a lower portion of the back gate and a second doped region in an upper portion of the back gate. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障