| 专利名称 | Methods for manufacturing semiconductor devices | 申请号 | US201514662963 | 专利类型 | US | 公开（公告）号 | US9418835(B2) | 公开（授权）日 | 2016.08.16 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Wang Guilei;Liu Jinbiao;Li Junfeng | 主分类号 | H01L21/02 | IPC主分类号 | H01L21/02;H01L21/265 | 专利有效期 | Methods for manufacturing semiconductor devices 至Methods for manufacturing semiconductor devices | 法律状态 | 说明书摘要 | The present disclosure provides a method of manufacturing a semiconductor device having silicon nitride with a tensile stress, the method comprising: c1) introducing and pre-stabilizing NH3 gas and N2 gas; c2) introducing silane; c3) igniting the gases by a radio-frequency source; c4) depositing SiN; and c5) processing the SiN by using a nitrogen ion implantation. According to the present disclosure, the nitrogen content in the SiN film can be enhanced by the nitrogen ion implantation and impinging, thereby increasing the density of the film. In this way, the acid resistance of the SiN with tensile stress is enhanced, so that the SiN with tensile stress may be integrated in a dual-strained liner of a gate-last process, so as to effectively improve the properties and reliability of the device. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障