| 专利名称 | Semiconductor structure and method for manufacturing the same | 申请号 | US201114354884 | 专利类型 | US | 公开（公告）号 | US9209269(B2) | 公开（授权）日 | 2015.12.08 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Xu Jing;Liu Yunfei | 主分类号 | H01L27/12 | IPC主分类号 | H01L27/12;H01L29/66;H01L29/786;H01L21/285;H01L21/324;H01L29/45 | 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | A method for manufacturing a semiconductor structure comprises following steps: providing an SOI substrate, forming a gate stack on the SOI substrate, forming sidewall spacers on sidewalls of the gate stack, and forming source/drain regions on each side of the gate stack; depositing a first metal layer on surfaces of an entire semiconductor structure, and then removing the first metal layer; forming an amorphous semiconductor layer on surfaces of the source/drain regions; depositing a second metal layer on surfaces of the entire semiconductor structure, and then removing the second metal layer; and annealing the semiconductor structure. Accordingly, the present invention further provides a semiconductor structure. The present invention is capable of effectively reducing contact resistance at source/drain regions. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障