| 专利名称 | Semiconductor device and method for manufacturing the same | 申请号 | US201514696616 | 专利类型 | US | 公开（公告）号 | US9431504(B2) | 公开（授权）日 | 2016.08.30 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Huaxiang;Zhang Yongkui;Zhao Zhiguo;Lu Zhiyong;Zhu Huilong | 主分类号 | H01L29/49 | IPC主分类号 | H01L29/49;H01L29/10;H01L29/66;H01L21/8234;H01L27/088;H01L21/265 | 专利有效期 | Semiconductor device and method for manufacturing the same 至Semiconductor device and method for manufacturing the same | 法律状态 | 说明书摘要 | A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障