| 专利名称 | Method for manufacturing semiconductor device | 申请号 | US201514943706 | 专利类型 | US | 公开（公告）号 | US9412657(B2) | 公开（授权）日 | 2016.08.09 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhong Huicai;Zhao Chao;Zhu Huilong | 主分类号 | H01L21/4763 | IPC主分类号 | H01L21/4763;H01L21/768 | 专利有效期 | Method for manufacturing semiconductor device 至Method for manufacturing semiconductor device | 法律状态 | 说明书摘要 | In a method for manufacturing a semiconductor, a Through Silicon Via (TSV) template wafer and production wafers form a sandwich structure, in which the TSV template wafer has TSV structures uniformly distributed therein, for providing electrical connection between the production wafers to form 3D interconnection. The TSV template wafer is obtained by thinning a semiconductor wafer, which facilitates reducing the difficulty in etching and filling. Connection parts are provided on the TSV template wafer, for convenience of interconnection between the overlying and underlying production wafers, which facilitates reducing the difficulty in alignment and improving the convenience of design of electrical connection for 3D devices. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障