| 专利名称 | Apparatus with two-chamber structure for growing silicon carbide crystals | 申请号 | US201013379608 | 专利类型 | US | 公开（公告）号 | US9228275(B2) | 公开（授权）日 | 2016.01.05 | 申请（专利权）人 | 中国科学院上海硅酸盐研究所 | 发明（设计）人 | Chen Zhizhan;Shi Erwei;Yan Chengfeng;Xiao Bing | 主分类号 | C30B35/00 | IPC主分类号 | C30B35/00;C30B29/36;C30B23/00 | 专利有效期 | Apparatus with two-chamber structure for growing silicon carbide crystals 至Apparatus with two-chamber structure for growing silicon carbide crystals | 法律状态 | 说明书摘要 | An apparatus with two-chamber structure for growing silicon carbide (SiC) crystals is disclosed. The apparatus comprises a sample feed chamber and a crystal growth chamber, both of which are separately connected with each other by a vacuum baffle valve and connected with a vacuum system. The crystal growth apparatus ensures that the insulation materials in the crystal growth chamber cannot contact with air, minimizes the adsorption of nitrogen and pollutants on the insulation materials and the growth chamber, improves purity of SiC crystals and achieves precise control of the impurities so that growth of high-quality SiC crystals such as conductive, doped semi-insulating or high-purity semi-insulating SiC crystals and the like is enabled. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障