| 专利名称 | Semiconductor devices and methods for manufacturing the same | 申请号 | US201314144275 | 专利类型 | US | 公开（公告）号 | US9117926(B2) | 公开（授权）日 | 2015.08.25 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing | 主分类号 | H01L21/8234 | IPC主分类号 | H01L21/8234;H01L27/088;H01L21/8238;H01L29/66 | 专利有效期 | Semiconductor devices and methods for manufacturing the same 至Semiconductor devices and methods for manufacturing the same | 法律状态 | 说明书摘要 | A semiconductor device and a method of manufacturing the same is disclosed. In one aspect, the method comprises forming a first MOSFET having a first gate length in a semiconductor substrate, and forming a second MOSFET having a second gate length in the semiconductor substrate. Furthermore, the second gate length is less than the first gate length, and wherein the second MOSFET has a gate stack in the form of a spacer having a gate conductor and a gate dielectric isolating the gate conductor from the semiconductor substrate. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障