| 专利名称 | Semiconductor devices and methods for manufacturing the same | 申请号 | US201213623567 | 专利类型 | US | 公开（公告）号 | US9064954(B2) | 公开（授权）日 | 2015.06.23 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing;Zhong Huicai | 主分类号 | H01L29/78 | IPC主分类号 | H01L29/78;H01L29/66;H01L29/165 | 专利有效期 | Semiconductor devices and methods for manufacturing the same 至Semiconductor devices and methods for manufacturing the same | 法律状态 | 说明书摘要 | Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, a method includes forming a first shielding layer on a substrate. The method further includes forming one of source and drain regions, which is stressed, with the first shielding layer as a mask. The method further includes forming a second shielding layer on the substrate, and forming the other of the source and drain regions with the second shielding layer as a mask. The method further includes removing a portion of the second shielding layer which is next to the other of the source and drain regions. The method further includes forming a gate dielectric layer, and forming a gate conductor as a spacer on a sidewall of a remaining portion of the second shielding layer. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障