| 专利名称 | Method for forming tin by PVD | 申请号 | US201213695191 | 专利类型 | US | 公开（公告）号 | US8802578(B2) | 公开（授权）日 | 2014.08.12 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Fu Zuozhen;Yin Huaxiang;Yan Jiang | 主分类号 | H01L21/203 | IPC主分类号 | H01L21/203;H01L21/02;C23C14/34;C23C14/54;C23C14/06;C23C14/18 | 专利有效期 | Method for forming tin by PVD 至Method for forming tin by PVD | 法律状态 | 说明书摘要 | A method for forming titanium nitride by PVD is disclosed, comprising: generating ions of a noble gas by glow discharge under a vacuum condition that a nitrogen gas and the noble gas are supplied; nitriding a surface of a wafer and a surface of a titanium target with the nitrogen gas; bombarding the surface of the titanium target with the ions of the noble gas after they are accelerated in an electric field so that titanium ions and titanium nitride are sputtered; and forming a titanium nitride layer by depositing titanium nitride on the surface of the wafer in a magnetic field, while titanium ions are injected into the surface of the wafer so that stress is introduced into the titanium nitride layer, wherein non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased by increasing kinetic energy of titanium ions which are injected into the surface of the wafer. In the method for forming titanium nitride by PVD according to the present disclosure, kinetic energy of titanium ions which are injected into the surface of the wafer is increased by controlling process parameters so that non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased. |
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