| 专利名称 | Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same | 申请号 | US201113510390 | 专利类型 | US | 公开（公告）号 | US9087691(B2) | 公开（授权）日 | 2015.07.21 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou | 主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L21/8234;H01L21/20;H01L21/36;H01L21/02;H01L29/775;H01L29/06;H01L29/16;H01L29/20;H01L29/66;H01L29/786;B82Y10/00;B82Y40/00;B82Y30/00 | 专利有效期 | Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same 至Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same | 法律状态 | 说明书摘要 | A MOSFET with a graphene nano-ribbon, and a method for manufacturing the same are provided. The MOSFET comprises an insulating substrate; and an oxide protection layer on the insulating substrate. At least one graphene nano-ribbon is embedded in the oxide protection layer and has a surface which is exposed at a side surface of the oxide protection layer. A channel region is provided in each of the at least one graphene nano-ribbon. A source region and a drain regions are provided in each of the at least one graphene nano-ribbon. The channel region is located between the source region and the drain region. A gate dielectric is positioned on the at least one graphene nano-ribbon. A gate conductor on the gate dielectric. A source and drain contacts contact the source region and the drain region respectively on the side surface of the oxide protection layer. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障