| 专利名称 | Method for fabricating contact electrode and semiconductor device | 申请号 | US201113129075 | 专利类型 | US | 公开（公告）号 | US8803208(B2) | 公开（授权）日 | 2014.08.12 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Yin Haizhou;Luo Zhijiong | 主分类号 | H01L29/78 | IPC主分类号 | H01L29/78;H01L21/8234;H01L23/485;H01L29/66;H01L29/417 | 专利有效期 | Method for fabricating contact electrode and semiconductor device 至Method for fabricating contact electrode and semiconductor device | 法律状态 | 说明书摘要 | The invention provides a semiconductor device comprising: a substrate; a gate, which is formed on the substrate; a source and a drain, which are located on opposite sides of the gate, respectively; a contact, which contacts with the source and/or the drain, wherein the contact has an enlarged end at an end which is in contact with the source and/or the drain. In the present invention, since the contact area of the contact is increased on the interface in contact with the source/the drain, the contact resistance can be reduced, and thus the performances of the semiconductor device can be guaranteed/improved. The present invention further provides a method of fabricating the semiconductor device (especially the contact therein) as previously described. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障