| 专利名称 | Semiconductor device and method for manufacturing the same | 申请号 | US201213812503 | 专利类型 | US | 公开（公告）号 | US9054018(B2) | 公开（授权）日 | 2015.06.09 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Ma Xiaolong;Yin Huaxiang;Xu Sen;Zhu Huilong | 主分类号 | H01L29/06 | IPC主分类号 | H01L29/06;H01L21/84;H01L29/15;H01L29/66;H01L29/78;H01L29/10;B82Y10/00;H01L29/51;H01L29/165 | 专利有效期 | Semiconductor device and method for manufacturing the same 至Semiconductor device and method for manufacturing the same | 法律状态 | 说明书摘要 | The present invention discloses a method for manufacturing a semiconductor device, which comprises: forming a plurality of fins on a substrate, which extend along a first direction and have rhombus-like cross-sections; forming a gate stack structure on each fin, which traverses the plurality of fins and extends along a second direction; wherein a portion in each fin that is under the gate stack structure forms a channel region of the device, and portions in each fin that are at both sides of the gate stack structure along the first direction form source and drain regions. The semiconductor device and its manufacturing method according to the present invention use rhombus-like fins to improve the gate control capability to effectively suppress the short channel effect, moreover, an epitaxial quantum well is used therein to better limit the carriers, thus improving the device drive capability. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障