| 专利名称 | Method for manufacturing three-dimensional semiconductor memory device | 申请号 | US201113880641 | 专利类型 | US | 公开（公告）号 | US9070872(B2) | 公开（授权）日 | 2015.06.30 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Huo Zongliang;Liu Ming | 主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L45/00;H01L27/06;H01L27/10;H01L27/24 | 专利有效期 | Method for manufacturing three-dimensional semiconductor memory device 至Method for manufacturing three-dimensional semiconductor memory device | 法律状态 | 说明书摘要 | The present disclosure provides a method for manufacturing a three-dimensional semiconductor memory device. In the method, a storage array is divided into a plurality of storage sub-arrays. As a result, a respective via of each storage sub-array can be etched respectively, which is different from the prior art, where a via for a bottom electrode of a plurality of layers of resistive cells is etched at one time. The vias are filled with metal so that storage sub-arrays are connected with each other. The method for manufacturing the three-dimensional semiconductor memory device according to the present disclosure can substantially reduce process complexity and difficulty of etching process in high-density integration, and also improve a number of layers of the resistive cells integrated in the storage array. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障