| 专利名称 | Shallow trench isolation structure, manufacturing method thereof and a device based on the structure | 申请号 | US201113519573 | 专利类型 | US | 公开（公告）号 | US9070744(B2) | 公开（授权）日 | 2015.06.30 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yan Jiang | 主分类号 | H01L21/76 | IPC主分类号 | H01L21/76;H01L21/762 | 专利有效期 | Shallow trench isolation structure, manufacturing method thereof and a device based on the structure 至Shallow trench isolation structure, manufacturing method thereof and a device based on the structure | 法律状态 | 说明书摘要 | The present invention relates to a shallow trench isolation structure, manufacturing method thereof and a device based on the structure. The present invention provides a method for manufacturing a shallow trench isolation (STI) structure, characterized in comprising the following steps: providing a semiconductor substrate; forming an insulating medium on said semiconductor substrate; etching a part of the insulating medium by using a mask to expose the semiconductor substrate thereunder, the unetched insulating medium forming STI regions; and epitaxially growing a semiconductor layer on said semiconductor substrate between said STI regions as an active region. With the method provided by the present invention, the problem of filling a small-size trench is solved and the problem of STI step height is overcome. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障