| 专利名称 | Semiconductor structure and method for manufacturing the same | 申请号 | US201113138053 | 专利类型 | US | 公开（公告）号 | US9178070(B2) | 公开（授权）日 | 2015.11.03 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou | 主分类号 | H01L27/12 | IPC主分类号 | H01L27/12;H01L29/786;H01L29/423;H01L29/66 | 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | The present application discloses a semiconductor structure and a method for manufacturing the same. A semiconductor structure according to the present invention can adjust the threshold voltage by capacitive coupling between a backgate region either and a source region or a drain region with a common contact, i.e. a source contact or a drain contact, which leads to a simple manufacturing process, a higher integration level, and a lower manufacture cost. Moreover, the asymmetric design of the backgate structure, together with the doping of the backgate region which can be varied as required in an actual device design, can further enhance the effects of adjusting the threshold voltage and improve the performances of the device. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障