| 专利名称 | Embedded source/drain MOS transistor | 申请号 | US201113380828 | 专利类型 | US | 公开（公告）号 | US8748983(B2) | 公开（授权）日 | 2014.06.10 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhong Huicai;Zhao Chao;Liang Qingqing | 主分类号 | H01L27/12 | IPC主分类号 | H01L27/12;H01L21/70 | 专利有效期 | Embedded source/drain MOS transistor 至Embedded source/drain MOS transistor | 法律状态 | 说明书摘要 | An embedded source/drain MOS transistor and a formation method thereof are provided. The embedded source/drain MOS transistor comprises: a semiconductor substrate; a gate structure on the semiconductor substrate; and a source/drain stack embedded in the semiconductor substrate at both sides of the gate structure with an upper surface of the source/drain stack being exposed, wherein the source/drain stack comprises a dielectric layer and a semiconductor layer above the dielectric layer. The present invention can cut off the path for the leakage current from the source region and the drain region to the semiconductor substrate, thereby reducing the leakage current from the source region and the drain region to the semiconductor substrate. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障