| 专利名称 | Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same | 申请号 | US201213981808 | 专利类型 | US | 公开（公告）号 | US9147745(B2) | 公开（授权）日 | 2015.09.29 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing;Zhong Huicai;Wu Hao | 主分类号 | H01L29/66 | IPC主分类号 | H01L29/66;H01L29/78;H01L29/786;H01L21/28;H01L29/51 | 专利有效期 | Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same 至Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same | 法律状态 | 说明书摘要 | Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the method comprises: sequentially forming a sacrificial layer and a semiconductor layer on a substrate; forming a first cover layer on the semiconductor layer; forming an opening extending into the substrate with the first cover layer as a mask; selectively removing at least a portion of the sacrificial layer through the opening, and filling an insulating material in a gap due to removal of the sacrificial layer; forming one of source and drain regions in the opening; forming a second cover layer on the substrate; forming the other of the source and drain regions with the second cover layer as a mask; removing a portion of the second cover layer; and forming a gate dielectric layer, and forming a gate conductor in the form of spacer on a sidewall of a remaining portion of the second cover layer. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障