| 专利名称 | Substrate structure, semiconductor device, and method for manufacturing the same | 申请号 | GB20120002556 | 专利类型 | GB | 公开（公告）号 | GB2488869(B) | 公开（授权）日 | 2016.07.27 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Huicai Zhong;Qingqing Liang | 主分类号 | H01L21/762 | IPC主分类号 | H01L21/762;H01L27/04 | 专利有效期 | Substrate structure, semiconductor device, and method for manufacturing the same 至Substrate structure, semiconductor device, and method for manufacturing the same | 法律状态 | 说明书摘要 | A substrate structure, a semiconductor device and a manufacturing method thereof are provided. The substrate structure includes: a semiconductor substrate (200); and a first isolation region (310), wherein the first isolation region (310) includes a first trench (206-1), which penetrates the semiconductor substrate (200); and a first dielectric layer (208), which is filled in the first trench (206-1). Since the isolation region penetrates the substrate, two surfaces of the substrate can be used for forming device structures to improve the utilization ratio of the substrate and the integration level of devices. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障