| 专利名称 | Transistor and method for forming the same | 申请号 | US201314023426 | 专利类型 | US | 公开（公告）号 | US9023706(B2) | 公开（授权）日 | 2015.05.05 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Zhu Huilong;Luo Zhijiong | 主分类号 | H01L29/66 | IPC主分类号 | H01L29/66;H01L29/78;H01L21/265;H01L21/8238;H01L29/51 | 专利有效期 | Transistor and method for forming the same 至Transistor and method for forming the same | 法律状态 | 说明书摘要 | The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a channel region under the gate dielectric layer; and a source region and a drain region located in the semiconductor substrate and on respective sides of the channel region, wherein at least one of the source and drain regions comprises a set of dislocations that are adjacent to the channel region and arranged in the direction perpendicular to a top surface of the semiconductor substrate, and the set of dislocations comprises at least two dislocations. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障