| 专利名称 | Semiconductor device, formation method thereof, and package structure | 申请号 | US201113379347 | 专利类型 | US | 公开（公告）号 | US9024435(B2) | 公开（授权）日 | 2015.05.05 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhong Huicai;Liang Qingqing;Yan Jiang;Zhao Chao | 主分类号 | H01L23/34 | IPC主分类号 | H01L23/34;H01L23/522;H01L23/467;H01L23/473 | 专利有效期 | Semiconductor device, formation method thereof, and package structure 至Semiconductor device, formation method thereof, and package structure | 法律状态 | 说明书摘要 | A semiconductor device, a formation method thereof, and a package structure are provided. The semiconductor device comprises: a semiconductor substrate in which a metal-oxide-semiconductor field-effect transistor (MOSFET) is formed; a dielectric layer, provided on the semiconductor substrate and covering the MOSFET, wherein a plurality of interconnection structures are formed in the dielectric layer; and at least one heat dissipation path, embedded in the dielectric layer between the interconnection structures, for liquid or gas to circulate in the heat dissipation path, wherein openings of the heat dissipation path are exposed on the surface of the dielectric layer. The present invention can improve heat dissipation efficiency, and prevent chips from overheating. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障