| 专利名称 | Method for manufacturing P-type MOSFET | 申请号 | US201214004802 | 专利类型 | US | 公开（公告）号 | US9196706(B2) | 公开（授权）日 | 2015.11.24 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Xu Qiuxia;Zhu Huilong;Ye Tianchun;Zhou Huajie;Xu Gaobo;Liang Qingqing | 主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L21/8234;H01L29/66;H01L21/265;H01L21/28;H01L29/49;H01L29/51;H01L21/02;H01L29/423 | 专利有效期 | Method for manufacturing P-type MOSFET 至Method for manufacturing P-type MOSFET | 法律状态 | 说明书摘要 | Provided is a method for manufacturing a p-type MOSFET, including: forming a part of the MOSFET on a semiconductor substrate including source/drain regions, a replacement gate, and a gate spacer; removing the replacement gate stack of the MOSFET to form a gate opening; forming an interface oxide layer on the exposed surface of the semiconductor substrate; forming a high-K gate dielectric layer on the interface oxide layer; forming a first metal gate layer; implanting dopant ions into the first metal gate layer; and performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障