| 专利名称 | Semiconductor structure and method for manufacturing the same | 申请号 | US201214387143 | 专利类型 | US | 公开（公告）号 | US9276085(B2) | 公开（授权）日 | 2016.03.01 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Huaxiang;Ma Xiaolong;Qi Changliang;Xu Qiuxia;Chen Dapeng | 主分类号 | H01L21/02 | IPC主分类号 | H01L21/02;H01L21/332;H01L29/66;H01L29/78 | 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障