| 专利名称 | Method for manufacturing semiconductor structure | 申请号 | US201113133120 | 专利类型 | US | 公开（公告）号 | US9202913(B2) | 公开（授权）日 | 2015.12.01 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong | 主分类号 | H01L21/8238 | IPC主分类号 | H01L21/8238;H01L29/78;H01L29/66 | 专利有效期 | Method for manufacturing semiconductor structure 至Method for manufacturing semiconductor structure | 法律状态 | 说明书摘要 | The present application discloses a method for manufacturing a semiconductor structure, comprising the steps of: a) providing a p-type field effect transistor; b) forming a tensile-stressed layer on the p-type field effect transistor; c) removing a portion of the tensile-stressed layer, so that the remaining portion of the tensile-stressed layer generates compressive stress in the channel of the p-type field effect transistor; and d) performing annealing, so as to achieve the object of memorizing compressive stress in a channel of a transistor and improving the performance of the transistor. The method according to the present invention memorizes the compressive stress in the channel of the transistor by a stress memorization technique, increases mobility of holes, and improves overall performance of the semiconductor structure. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障