| 专利名称 | Field effect transistor device with improved carrier mobility and method of manufacturing the same | 申请号 | US201013063731 | 专利类型 | US | 公开（公告）号 | US9240351(B2) | 公开（授权）日 | 2016.01.19 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Luo Zhijiong;Yin Haizhou | 主分类号 | H01L21/70 | IPC主分类号 | H01L21/70;H01L21/8238;H01L29/78 | 专利有效期 | Field effect transistor device with improved carrier mobility and method of manufacturing the same 至Field effect transistor device with improved carrier mobility and method of manufacturing the same | 法律状态 | 说明书摘要 | The devices are manufactured by replacement gate process and replacement sidewall spacer process, and both tensile stress in the channel region of NMOS device and compressive stress in the channel region of PMOS device are increased by forming a first stress layer with compressive stress in the space within the first metal gate layer of NMOS and a second stress layer with tensile stress in the space within the second metal gate layer of PMOS, respectively. After formation of the stress layers, sidewall spacers of the gate stacks of PMOS and NMOS devices are removed so as to release stress in the channel regions. In particular, stress structure with opposite stress may be formed on sidewalls of the gate stacks of the NMOS device and PMOS device and on a portion of the source region and the drain region, in order to further increase both tensile stress of the NMOS device and compressive stress of the PMOS device. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障