| 专利名称 | Semiconductor device and method for manufacturing the same | 申请号 | US201214354648 | 专利类型 | US | 公开（公告）号 | US9147762(B2) | 公开（授权）日 | 2015.09.29 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Jiang Wei;Zhu Huilong | 主分类号 | H01L27/01 | IPC主分类号 | H01L27/01;H01L29/78;H01L29/10;H01L29/165;H01L29/66 | 专利有效期 | Semiconductor device and method for manufacturing the same 至Semiconductor device and method for manufacturing the same | 法律状态 | 说明书摘要 | A semiconductor device and a method for manufacturing the same are provided. In one embodiment, the method comprises: growing a first epitaxial layer on a substrate; forming a sacrificial gate stack on the first epitaxial layer; selectively etching the first epitaxial layer; growing and in-situ doping a second epitaxial layer on the substrate; forming a spacer on opposite sides of the sacrificial gate stack; and forming source/drain regions with the spacer as a mask. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障