| 专利名称 | Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin | 申请号 | US201113577942 | 专利类型 | US | 公开（公告）号 | US9070719(B2) | 公开（授权）日 | 2015.06.30 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhong Huicai;Liang Qingqing;Luo Jun;Zhao Chao | 主分类号 | H01L21/762 | IPC主分类号 | H01L21/762;H01L21/336;H01L29/78;H01L29/66;H01L21/8234;H01L21/8238;H01L29/06;H01L21/84 | 专利有效期 | Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin 至Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin | 法律状态 | 说明书摘要 | A semiconductor device structure, a method for manufacturing the same, and a method for manufacturing a semiconductor fin are disclosed. In one embodiment, the method for manufacturing the semiconductor device structure comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second direction, the second direction crossing the first direction on the semiconductor substrate, and the gate line intersecting the fin with a gate dielectric layer sandwiched between the gate line and the fin; forming a dielectric spacer surrounding the gate line; and performing inter-device electrical isolation at a predetermined position, wherein isolated portions of the gate line form independent gate electrodes of respective devices. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障