| 专利名称 | 3D integrated circuit structure, semiconductor device and method of manufacturing same | 申请号 | US201013062001 | 专利类型 | US | 公开（公告）号 | US9064849(B2) | 公开（授权）日 | 2015.06.23 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong | 主分类号 | H01L21/4763 | IPC主分类号 | H01L21/4763;H01L23/48;H01L25/065;H01L25/00 | 专利有效期 | 3D integrated circuit structure, semiconductor device and method of manufacturing same 至3D integrated circuit structure, semiconductor device and method of manufacturing same | 法律状态 | 说明书摘要 | The present invention discloses a semiconductor device. In one embodiment, the semiconductor device comprises a substrate, a diffusion stop layer formed on the substrate, an SOI layer formed on the diffusion stop layer, an MOSFET transistor formed on the SOI layer, and a TSV formed in a manner of penetrating through the substrate, the diffusion stop layer, the SOI layer, and a layer where the MOSFET transistor is located; and an interconnect structure connecting the MOSFET transistor and the TSV. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障