| 专利名称 | Isolation region, semiconductor device and methods for forming the same | 申请号 | US201113119129 | 专利类型 | US | 公开（公告）号 | US9082717(B2) | 公开（授权）日 | 2015.07.14 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Zhu Huilong;Luo Zhijiong | 主分类号 | H01L29/16 | IPC主分类号 | H01L29/16;H01L21/336;H01L21/31;H01L21/308;H01L21/762;H01L29/66;H01L29/78 | 专利有效期 | Isolation region, semiconductor device and methods for forming the same 至Isolation region, semiconductor device and methods for forming the same | 法律状态 | 说明书摘要 | An isolation region is provided. The isolation region includes a first groove and an insulation layer filling the first groove. The first groove is embedded into a semiconductor substrate and includes a first sidewall, a bottom surface and a second sidewall that extends from the bottom surface and joins to the first sidewall. An angle between the first sidewall and a normal line of the semiconductor substrate is larger than a standard value. A method for forming an isolation region is further provided. The method includes: forming a first trench on a semiconductor substrate, wherein an angle between a sidewall of the first trench and a normal line of the semiconductor substrate is larger than a standard value; forming a mask on the sidewall to form a second trench on the semiconductor substrate by using the mask; and forming an insulation layer to fill the first and second trenches. A semiconductor device and a method for forming the same are still further provided. In the semiconductor device, a material of the semiconductor substrate is interposed between a second groove bearing a semiconductor layer for forming an S/D region and the first and second sidewalls. The present invention is beneficial to reduce leakage current. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障