| 专利名称 | SRAM cell and method for manufacturing the same | 申请号 | US201113509912 | 专利类型 | US | 公开（公告）号 | US9196541(B2) | 公开（授权）日 | 2015.11.24 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing | 主分类号 | H01L21/70 | IPC主分类号 | H01L21/70;H01L21/8234;H01L27/11 | 专利有效期 | SRAM cell and method for manufacturing the same 至SRAM cell and method for manufacturing the same | 法律状态 | 说明书摘要 | A SRAM cell and a method for manufacturing the same are disclosed. In one embodiment, the SRAM cell may include: a semiconductor layer; and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the semiconductor layer, wherein the first FinFET includes a first fin formed by patterning the semiconductor layer, the first fin having a first top surface and a first bottom surface, wherein the second FinFET includes a second fin formed by patterning the semiconductor layer, the second fin having a second top surface and a second bottom surface, and wherein the first top surface is substantially flush with the second top surface, the first and second bottom surfaces abut against the semiconductor layer, and the height of the second fin is greater than the height of the first fin. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障