| 专利名称 | Semiconductor device and method for forming the same | 申请号 | US201113132985 | 专利类型 | US | 公开（公告）号 | US8749067(B2) | 公开（授权）日 | 2014.06.10 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhao Chao;Wang Wenwu;Zhu Huilong | 主分类号 | H01L23/48 | IPC主分类号 | H01L23/48;H01L23/52;H01L29/40;H01L21/4763 | 专利有效期 | Semiconductor device and method for forming the same 至Semiconductor device and method for forming the same | 法律状态 | 说明书摘要 | The present invention provides a semiconductor device. The semiconductor device comprises contact plugs that comprise a first contact plug formed by a first barrier layer arranged on the source and drain regions and a tungsten layer arranged on the first barrier layer; and second contact plugs comprising a second barrier layer arranged on both of the metal gate and the first contact plug and a conductive layer arranged on the second barrier layer. The conductivity of the conductive layer is higher than that of the tungsten layer. A method for forming the semiconductor device is also provided. The present invention provides the advantage of enhancing the reliability of the device when using the copper contact technique. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障