| 专利名称 | Semiconductor device and method of fabricating the same | 申请号 | US201013060468 | 专利类型 | US | 公开（公告）号 | US9018739(B2) | 公开（授权）日 | 2015.04.28 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou | 主分类号 | H01L29/04 | IPC主分类号 | H01L29/04;H01L29/78;H01L29/10;H01L29/165;H01L29/49;H01L29/51;H01L29/66 | 专利有效期 | Semiconductor device and method of fabricating the same 至Semiconductor device and method of fabricating the same | 法律状态 | 说明书摘要 | The present application discloses a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate; a first semiconductor layer on the semiconductor substrate; a second semiconductor layer surrounding the first semiconductor layer; a high k dielectric layer and a gate conductor formed on the first semiconductor layer; source/drain regions formed in the second semiconductor layer, wherein the second semiconductor layer has a slant sidewall in contact with the first semiconductor layer. The semiconductor device has an increased output current, an increased operating speed, and a reduced power consumption due to the channel region of high mobility. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障