| 专利名称 | Two-terminal memory cell and semiconductor memory device based on different states of stable current | 申请号 | US201113320331 | 专利类型 | US | 公开（公告）号 | US9013918(B2) | 公开（授权）日 | 2015.04.21 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Liang Qingqing;Tong Xiaodong;Zhong Huicai;Zhu Huilong | 主分类号 | G11C11/39 | IPC主分类号 | G11C11/39;G11C17/06;H01L27/102 | 专利有效期 | Two-terminal memory cell and semiconductor memory device based on different states of stable current 至Two-terminal memory cell and semiconductor memory device based on different states of stable current | 法律状态 | 说明书摘要 | A two-terminal memory cell includes a first P-type semiconductor layer, a first N-type semiconductor layer, a second P-type semiconductor layer, and a second N-type semiconductor layer arranged in sequence. A first data state may be stored in the memory cell by applying a forward bias, which is larger than a punch-through voltage VBO, between the first P-type semiconductor layer and the second N-type semiconductor layer. A second data state may be stored in the memory cell by applying a reverse bias, which is approaching to the reverse breakdown region of the memory cell, between the first P-type semiconductor layer and the second N-type semiconductor layer. In this way, the memory cell may be effectively used for data storage. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障