| 专利名称 | Semiconductor device | 申请号 | US201113501518 | 专利类型 | US | 公开（公告）号 | US9012963(B2) | 公开（授权）日 | 2015.04.21 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Liang Qingqing;Xu Miao;Zhu Huilong;Zhong Huicai | 主分类号 | H01L29/66 | IPC主分类号 | H01L29/66;H01L29/786;H01L29/49 | 专利有效期 | Semiconductor device 至Semiconductor device | 法律状态 | 说明书摘要 | The present application discloses a semiconductor device comprising a source region and a drain region in an ultra-thin semiconductor layer; a channel region between the source region and the drain region in the ultra-thin semiconductor layer; a front gate stack above the channel region, the front gate comprising a front gate and a front gate dielectric between the front gate and the channel region; and a back gate stack below the channel region, the back gate stack comprising a back gate and a back gate dielectric between the back gate and the channel region, wherein the front gate is made of a high-Vt material, and the back gate is made of a low-Vt material. According to another embodiment, the front gate and the back gate are made of the same material, and the back gate is applied with a forward bias voltage during operation. The semiconductor device alleviates threshold voltage fluctuation due to varied thickness of the channel region by means of the back gate. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障