| 专利名称 | Method of manufacturing semiconductor device | 申请号 | US201213989164 | 专利类型 | US | 公开（公告）号 | US9006057(B2) | 公开（授权）日 | 2015.04.14 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Qin Changliang;Hong Peizhen;Yin Huaxiang | 主分类号 | H01L21/36 | IPC主分类号 | H01L21/36;H01L27/088;H01L29/78;H01L21/306;H01L29/66;H01L21/3065;H01L21/265 | 专利有效期 | Method of manufacturing semiconductor device 至Method of manufacturing semiconductor device | 法律状态 | 说明书摘要 | A method of manufacturing a semiconductor device is disclosed. In one embodiment, the method comprises: forming a gate stack on a substrate; etching the substrate on both sides of the gate stack to form C-shaped source/drain grooves; and wet-etching the C-shaped source/drain grooves to form Σ-shaped source/drain grooves. With this method, it is possible to effectively increase stress applied to a channel region, to accurately control a depth of the source/drain grooves, and to reduce roughness of side walls and bottom portions of the grooves and thus reduce defects by etching the C-shaped source/drain grooves and then further wet-etching them to form the Σ-shaped source/drain grooves. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障