| 专利名称 | 3D semiconductor memory device and manufacturing method thereof | 申请号 | US201113376276 | 专利类型 | US | 公开（公告）号 | US9000409(B2) | 公开（授权）日 | 2015.04.07 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Huo Zongliang;Liu Ming | 主分类号 | H01L47/00 | IPC主分类号 | H01L47/00;H01L27/24;H01L45/00 | 专利有效期 | 3D semiconductor memory device and manufacturing method thereof 至3D semiconductor memory device and manufacturing method thereof | 法律状态 | 说明书摘要 | The present application discloses a 3D semiconductor memory device having 1T1R memory configuration based on a vertical-type gate-around transistor, and a manufacturing method thereof. A on/off current ratio can be well controlled by changing a width and a length of a channel of the gate-around transistor, so as to facilitate multi-state operation of the 1T1R memory cell. Moreover, the vertical transistor has a smaller layout size than a horizontal transistor, so as to reduce the layout size effectively. Thus, the 3D semiconductor memory device can be integrated into an array with a high density. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障