| 专利名称 | Method for manufacturing semiconductor device | 申请号 | US201214361944 | 专利类型 | US | 公开（公告）号 | US8987127(B2) | 公开（授权）日 | 2015.03.24 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Luo Jun;Zhao Chao;Zhong Huicai;Li Junfeng;Chen Dapeng | 主分类号 | H01L21/00 | IPC主分类号 | H01L21/00;H01L21/28;H01L29/66;H01L29/78;H01L21/283 | 专利有效期 | Method for manufacturing semiconductor device 至Method for manufacturing semiconductor device | 法律状态 | 说明书摘要 | The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a gate stacked structure on a silicic substrate; depositing a Nickel-based metal layer on the substrate and the gate stacked structure; performing a first annealing so that the silicon in the substrate reacts with the Nickel-based metal layer to form a Ni-rich phase of metal silicide; performing an ion implantation by implanting doping ions into the Ni-rich phase of metal silicide; performing a second annealing so that the Ni-rich phase of metal to silicide is transformed into a Nickel-based metal silicide source/drain, and meanwhile, forming a segregation region of the doping ions at an interface between the Nickel-based metal silicide source/drain and the substrate. The method for manufacturing the semiconductor device according to the present invention performs the annealing after implanting the doping ions into the Ni-rich phase of metal silicide, thereby improving the solid solubility of the doping ions and forming a segregation region of highly concentrated doping ions, thus the SBH between the Nickel-based metal silicide and the silicon channel is effectively reduced, and the driving capability of the device is improved. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障