| 专利名称 | Non-volatile memory device using finfet and method for manufacturing the same | 申请号 | US201013061461 | 专利类型 | US | 公开（公告）号 | US8981454(B2) | 公开（授权）日 | 2015.03.17 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Yin Haizhou;Luo Zhijiong | 主分类号 | H01L29/788 | IPC主分类号 | H01L29/788;H01L29/66;H01L29/78 | 专利有效期 | Non-volatile memory device using finfet and method for manufacturing the same 至Non-volatile memory device using finfet and method for manufacturing the same | 法律状态 | 说明书摘要 | The present application discloses a non-volatile memory device, comprising a semiconductor fin on an insulating layer; a channel region at a central portion of the semiconductor fin; source/drain regions on both sides of the semiconductor fin; a floating gate arranged at a first side of the semiconductor fin and extending in a direction further away from the semiconductor fin; and a first control gate arranged on top of the floating gate or covering top and sidewall portions of the floating gate. The non-volatile memory device reduces a short channel effect, has an increased memory density, and is cost effective. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障