| 专利名称 | Semiconductor structure and method for manufacturing the same | 申请号 | US201214002456 | 专利类型 | US | 公开（公告）号 | US8969164(B2) | 公开（授权）日 | 2015.03.03 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Luo Zhijiong;Yin Haizhou | 主分类号 | H01L21/336 | IPC主分类号 | H01L21/336;H01L29/78;H01L29/66;H01L29/08;H01L21/84;H01L27/12;H01L21/8234;H01L29/51 | 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | 说明书摘要 | A semiconductor structure comprises a substrate, a gate stack, a base area, and a source/drain region, wherein the gate stack is located on the base area, the source/drain region is located in the base area, and the base area is located on the substrate. A supporting isolated structure is provided between the base area and the substrate, wherein part of the supporting structure is connected to the substrate; a cavity is provided between the base area and the substrate, wherein the cavity is composed of the base area, the substrate and the supporting isolated structure. A stressed material layer is provided on both sides of the gate stack, the base area and the supporting isolated structure. Correspondingly, a method is provided for manufacturing such a semiconductor structure, which inhibits the short channel effect, reduces the parasitic capacitance and leakage current, and enhances the steepness of the source/drain region. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障