| 专利名称 | Filled-skutterudite composite material and method of preparing the same | 申请号 | US201013497833 | 专利类型 | US | 公开（公告）号 | US8968589(B2) | 公开（授权）日 | 2015.03.03 | 申请（专利权）人 | 中国科学院上海硅酸盐研究所 | 发明（设计）人 | Chen Lidong;Chen Xihong;He Lin;Huang Xiangyang;Xiong Zhen;Zhang Wenqing | 主分类号 | C01G51/00 | IPC主分类号 | C01G51/00;H01L35/18;H01L35/20;B82Y30/00 | 专利有效期 | Filled-skutterudite composite material and method of preparing the same 至Filled-skutterudite composite material and method of preparing the same | 法律状态 | 说明书摘要 | A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05 y<1; and GaSb particles within the filled skutterudite matrix, wherein the composite material comprises 0.05-5 mol % GaSb particles. Compared with conventional materials, the composite material exhibits a substantially increased Seebeck coefficient, a slightly decreased overall thermal conductivity, and a substantially increased thermoelectric performance index across the whole temperature zone from the low temperature end to the high temperature end, as well as a greatly enhanced thermoelectric efficiency. |
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