| 专利名称 | Semiconductor device having a trench isolation structure | 申请号 | US201113380806 | 专利类型 | US | 公开（公告）号 | US8975700(B2) | 公开（授权）日 | 2015.03.10 | 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Liang Qingqing;Zhu Huilong;Zhong Huicai | 主分类号 | H01L27/12 | IPC主分类号 | H01L27/12;H01L29/78;H01L21/84;H01L21/8238 | 专利有效期 | Semiconductor device having a trench isolation structure 至Semiconductor device having a trench isolation structure | 法律状态 | 说明书摘要 | The invention relates to a semiconductor device and a method for manufacturing such a semiconductor device. A semiconductor device according to an embodiment of the invention comprises: a substrate which comprises a base layer, an insulating layer on the base layer, and a semiconductor layer on the insulating layer; and a first transistor and a second transistor formed on the substrate, the first and second transistors being isolated from each other by a trench isolation structure formed in the substrate. Wherein at least a part of the base layer under at least one of the first and second transistors is strained, and the strained part of the base layer is adjacent to the insulating layer. The semiconductor device according to the invention increases the speed of the device and thus improves the performance of the device. |
1、源头对接，价格透明
2、平台验证，实名审核
3、合同监控，代办手续
4、专员跟进，交易保障